NAND512W3A2DZA6F NUMONYX, NAND512W3A2DZA6F Datasheet - Page 20

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NAND512W3A2DZA6F

Manufacturer Part Number
NAND512W3A2DZA6F
Description
Manufacturer
NUMONYX
Datasheet

Specifications of NAND512W3A2DZA6F

Cell Type
NAND
Density
512Mb
Access Time (max)
12us
Interface Type
Parallel
Address Bus
26b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
64M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / RoHS Status
Compliant
Device operations
6
6.1
Figure 6.
20/53
bytes 0 - 255
Device operations
Pointer operations
As the NAND flash memories contain two different areas for x16 devices and three different
areas for x8 devices (see
act as pointers to the different areas of the memory array (they select the most significant
column address).
The Read A and Read B commands act as pointers to the main memory area. Their use
depends on the bus width of the device.
In both the x8 and x16 devices the Read C command (50h), acts as a pointer to area C (the
spare memory area) that is bytes 512 to 527 or words 256 to 263.
Once the Read A and Read C commands have been issued the pointer remains in the
respective areas until another pointer code is issued. However, the Read B command is
effective for only one operation, once an operation has been executed in area B the pointer
returns automatically to area A.
The pointer operations can also be used before a program operation, that is the appropriate
code (00h, 01h or 50h) can be issued before the program command 80h is issued (see
Figure
Pointer operations
Area A
(00h)
A
In x16 devices the Read A command (00h) sets the pointer to area A (the whole of the
main area) that is words 0 to 255.
In x8 devices the Read A command (00h) sets the pointer to area A (the first half of the
main area) that is bytes 0 to 255, and the Read B command (01h) sets the pointer to
area B (the second half of the main area) that is bytes 256 to 511.
7).
(00h,01h,50h)
bytes 256 - 511
x8 devices
Pointer
Area B
(01h)
B
512 - 527
Area C
bytes
(50h)
C
Figure
Page buffer
6) the read command codes (00h, 01h, 50h) are used to
words 0 - 255
x16 devices
Area A
NAND512xxA2D, NAND01GxxA2C
(00h)
A
(00h,50h)
Pointer
256 - 263
Area C
words
(50h)
C
Page buffer
AI07592

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