M29W128GH70N6F NUMONYX, M29W128GH70N6F Datasheet - Page 71

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M29W128GH70N6F

Manufacturer Part Number
M29W128GH70N6F
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M29W128GH70N6F

Cell Type
NOR
Density
128Mb
Access Time (max)
70ns
Interface Type
Parallel
Address Bus
24/23Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
16M/8M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / RoHS Status
Compliant

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Figure 21. Chip/block erase waveforms (8-bit mode)
1. For a Chip Erase command, addresses and data are 555h and 10h, respectively, while they are BAd and 30h for a Block
2. BAd is the block address.
3. See
Table 28.
1. Only available upon customer request.
Symbol
t
t
t
t
t
t
t
t
t
EHWH
t
DVEH
EHDX
WLEL
ELEH
EHEL
GHEL
AVAV
AVEL
ELAX
Erase command.
and
Table 26: Read AC characteristics
Table 27: Write AC characteristics, write enable
t
Alt.
t
t
t
t
CPH
t
t
t
t
WC
WH
WS
CP
DS
DH
AS
AH
Write AC characteristics, chip enable controlled
DQ0-DQ7
A0-A22/
A–1
E
G
W
tGHWL
Address Valid to Next Address Valid
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Input Valid to Chip Enable High
Chip Enable High to Input transition
Chip Enable High to Write Enable High
Chip Enable High to Chip Enable Low
Address Valid to Chip Enable Low
Chip Enable Low to Address transition
Output Enable High Chip Enable Low
tAVAV
tELWL
tWLWH
tDVWH
tAVWL
555h
for details on the timings.
AAh
Parameter
tWHEH
tWHDX
2AAh
controlled,
tWHWL
55h
tWLAX
555h
Table 28: Write AC characteristics, chip enable controlled
80h
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
555h
AAh
60 ns
M29W128GH, M29W128GL
2AAh
65
35
45
30
45
0
0
0
0
0
(1)
55h
555h/BAd
70 ns
(1)
70
35
45
30
45
0
0
0
0
0
10h/
30h
AI13335
80 ns
80
35
45
30
45
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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