M29W128GH70N6F NUMONYX, M29W128GH70N6F Datasheet - Page 84

• Manufacturer Part Number: M29W128GH70N6F
• Manufacturer: NUMONYX

Specifications of M29W128GH70N6F

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Address Bus: 24/23Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 16M/8M
• Supply Current: 10mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / RoHS Status: Compliant

Table 38.
1. The values given in the above table are valid for both packages.
84/94
1Bh
1Ch
1Dh
1Eh
1Fh
x16
20h
21h
22h
23h
24h
25h
26h
Address
CFI query system interface information
3Ah
3Ch
3Eh
4Ah
4Ch
36h
38h
40h
42h
44h
46h
48h
x8
00C5h
00B5h
0027h
0036h
0004h
0004h
0009h
0010h
0004h
0004h
0003h
0004h
Data
Typical timeout for minimum size write buffer program = 2
Maximum timeout for byte/word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Typical timeout for single byte/word program = 2
Typical timeout for individual block erase = 2
Typical timeout for full chip erase = 2
CC
CC
PPH
PPH
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
(1)
Description
n
n
times typical
ms
n
n
n
ms
times typical
times typical
n
n
times typical
μs
n
μs
200 μs
200 μs
12.5 V
11.5 V
Value
16 μs
16 μs
400 s
2.7 V
3.6 V
0.5 s
2.3 s
40 s