S25FL016A0LMFI011 Spansion Inc., S25FL016A0LMFI011 Datasheet - Page 25

• Manufacturer Part Number: S25FL016A0LMFI011
• Manufacturer: Spansion Inc.

Specifications of S25FL016A0LMFI011

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 10ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC W
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 19mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Compliant

February 27, 2009 S25FL016A_00_C4
9.12.1
Release from Deep Power Down and Read Electronic Signature (RES)
The device features an 8-bit Electronic Signature, which can be read using the RES command. See
Figure 9.13
Signature is not to be confused with the identification data obtained using the RDID command. The device
offers the Electronic Signature so that it can be used with previous devices that offered it; however, the
Electronic Signature should not be used for new designs, which should read the RDID data instead.
After the host system drives CS# low, it must write the RES command followed by 3 dummy bytes to SI (each
bit is latched on SI during the rising edge of SCK). The Electronic Signature is then output on SO; each bit is
shifted out on the falling edge of SCK. The RES operation is terminated by driving CS# high after the
Electronic Signature is read at least once. Additional clock cycles on SCK with CS# low cause the device to
output the Electronic Signature repeatedly.
When CS# is driven high, the device transitions from DP mode to the standby mode after a delay of t
previously described. The RES command always provides access to the Electronic Signature of the device
and can be applied even if DP mode has not been entered.
Any RES command issued while an erase, program, or WRSR operation is in progress not executed, and the
operation continues uninterrupted.
Notes
1. The S25FL016A has a manufacturer ID of 01h, and a device ID consisting of the memory type (02h) and the memory capacity (14h).
2. The S25FL016A has an Electronic Signature ID of 14h.
Power Saving
Write Control
Figure 9.13 Release from Deep Power Down and Read Electronic Signature (RES) Command Sequence
SCK
Operation
CS#
Program
Register
SO
Status
SI
Erase
Read
Hi-Z
and
FAST_READ
Command
WREN
WRSR
Table 9.4 on page 25
READ
RDSR
WRDI
RDID
RES
DP
SE
BE
PP
0
1
D a t a
2
Read Data Bytes
Read Data Bytes at Higher Speed
Read Identification
Write Enable
Write Disable
Sector Erase
Bulk (Chip) Erase
Page Program
Read from Status Register
Write to Status Register
Deep Power Down
Release from Deep Power Down
Release from Deep Power Down and
Read Electronic Signature
Command
3
4
5
S h e e t
Description
6
Table 9.4 Command Definitions
for the command sequence and signature value. The Electronic
S25FL016A
7
(Note 1)
MSB
23 22 21
8
9 10
(Note 2)
3 Dummy Bytes
28 29 30 31 32 33 34 35 36 37 38
3 2
Deep Power-down Mode
ABH (1010 1011)
ABH (1010 1011)
Command Code
0BH (0000 1011)
9FH (1001 1111)
D8H (1101 1000)
C7H (1100 0111)
B9H (1011 1001)
03H (0000 0011)
06H (0000 0110)
04H (0000 0100)
02H (0000 0010)
05H (0000 0101)
01H (0000 0001)
1
One-Byte
0
MSB
7
6
5
Electronic ID out
4
Address
Bytes
3
3
3
0
0
0
3
0
3
0
0
0
0
0
2
1
Dummy
0
Byte
0
1
0
0
0
0
0
0
0
0
0
0
3
t
RES
Data Bytes
Standby Mode
1 to 256
1 to ∞
1 to ∞
1 to ∞
1 to ∞
1 to 3
RES
0
0
0
0
1
0
0
, as
25