MT45W4MW16PCGA-70 L WT Micron Technology Inc, MT45W4MW16PCGA-70 L WT Datasheet - Page 17

MT45W4MW16PCGA-70 L WT

Manufacturer Part Number
MT45W4MW16PCGA-70 L WT
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT45W4MW16PCGA-70 L WT

Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Timing Requirements
Table 11:
PDF: 09005aef81f0698d / Source: 09005aef81f06935
64mb_asyncpage_cr1_0_p25z.fm - Rev. D 7/09 EN
Parameter
Address access time
Page access time
LB#/UB# access time
LB#/UB# disable to DQ High-Z output
LB#/UB# enable to Low-Z output
Maximum CE# pulse width
Chip select access time
Chip disable to DQ High-Z output
Chip enable to Low-Z output
Output enable to valid output
Output hold from address change
Output disable to DQ High-Z output
Output enable to Low-Z output
Page cycle time
READ cycle time
Asynchronous READ Cycle Timing Requirements
Notes:
1. Low-Z to High-Z timings are tested with the circuit shown in Figure 15 on page 16. The
2. High-Z to Low-Z timings are tested with the circuit shown in Figure 15 on page 16. The
3. Page mode enabled only.
High-Z timings measure a 100mV transition from either V
Low-Z timings measure a 100mV transition away from the High-Z (V
either V
OH
or V
OL
.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0
Symbol
17
t
t
t
t
t
t
t
CEM
t
OHZ
APA
t
t
t
BHZ
t
OLZ
t
t
BLZ
t
AA
OH
BA
CO
OE
HZ
PC
RC
LZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
10
10
20
70
5
3
70ns
Max
OH
70
20
70
70
20
8
4
8
8
or V
Timing Requirements
©2005 Micron Technology, Inc. All rights reserved.
OL
toward V
CC
Unit
Q/2) level toward
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Notes
1
2
3
1
2
1
2

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