5962-87664012A QP SEMICONDUCTOR, 5962-87664012A Datasheet - Page 14

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5962-87664012A

Manufacturer Part Number
5962-87664012A
Description
Manufacturer
QP SEMICONDUCTOR
Datasheet

Specifications of 5962-87664012A

Lead Free Status / RoHS Status
Supplier Unconfirmed
DSCC FORM 2234
APR 97
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified. Quality conformance inspection for device
class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for
device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
4.2.1 Additional criteria for device class M.
4.2.2 Additional criteria for device classes Q and V.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
4.4.1 Group A inspection.
a.
b.
a.
b.
c.
a.
b.
c.
DEFENSE SUPPLY CENTER COLUMBUS
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
(2) T
Interim and final electrical test parameters shall be as specified in table II herein.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
Interim and final electrical test parameters shall be as specified in table II herein.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
Tests shall be as specified in table II herein.
capacitance. C
tested in accordance with the latest revision of JEDEC Standard No. 20 and table I herein. For C
applicable pins on five devices with zero failures.
For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. The test
vectors used to verify the truth table shall test all possible input to output logic patterns of each function of the device.
For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.
C
IN
MICROCIRCUIT DRAWING
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015.
and C
COLUMBUS, OHIO 43218-3990
A
= +125°C, minimum.
PD
STANDARD
shall be measured only for initial qualification and after process or design changes which may affect
IN
shall be measured between the designated terminal and GND at a frequency of 1 MHz. C
SIZE
A
REVISION LEVEL
C
IN
and C
SHEET
5962-87664
PD
, test all
PD
14
shall be

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