BAP70AM.115 NXP Semiconductors, BAP70AM.115 Datasheet - Page 2

• Manufacturer Part Number: BAP70AM.115
• Manufacturer: NXP Semiconductors
• Type: Attenuatorr

Specifications of BAP70AM.115

• Configuration: Double Dual Series
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Power Dissipation: 300mW
• Operating Temperature Classification: Military
• Reverse Voltage: 50V
• Mounting: Surface Mount
• Maximum Series Resistance @ Minimum If: 100@0.5mAOhm
• Maximum Series Resistance @ Maximum If: 1.9@100mAOhm
• Typical Carrier Life Time: 1.25us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Lead Free Status / RoHS Status: Compliant

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
BAP70AM
Product data sheet
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Type number
BAP70AM
Symbol
V
I
P
T
T
Symbol
R
F
stg
j
R
tot
th(j-sp)
Marking
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2010
Marking code
N9*
Conditions
T
sp
= 90 °C
Conditions
Description
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
Min
-
-
-
−65
−65
Silicon PIN diode array
BAP70AM
Max
50
100
300
+150
+150
Typ
260
© NXP B.V. 2010. All rights reserved.
Unit
V
mA
mW
°C
°C
Unit
K/W
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