APT50GT120B2RDQ2G MICROSEMI, APT50GT120B2RDQ2G Datasheet - Page 2

• Manufacturer Part Number: APT50GT120B2RDQ2G
• Manufacturer: MICROSEMI

Specifications of APT50GT120B2RDQ2G

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Compliant

Dynamic Characteristic
Thermal and Mechanical Characteristics
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Symbol
Symbol Characteristic / Test Conditions
SSOA
z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
V
t
t
t
t
E
E
E
E
C
C
C
Q
Q
R
R
d(on)
d(off)
E
d(on)
d(off)
E
Q
on1
on2
off
G
W
GEP
t
t
on1
on2
t
t
on1
on2
oes
res
θ
θ
ies
ge
off
off
gc
r
f
r
f
g
is external gate resistance not including gate driver impedance.
JC
JC
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
T
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages.
6
6
4
4
5
5
T
J
= 150°C, R
Inductive Switching (125°C)
Inductive Switching (25°C)
L = 100μH, V
V
GE
Test Conditions
Gate Charge
= 0V, V
V
T
V
T
V
V
V
V
R
R
f = 1MHz
J
J
CC
CC
I
I
I
CE
G
GE
GE
GE
C
C
G
C
G
= +25°C
= 125°C
= 1.0Ω
= 600V
= 50A
= 50A
= 4.7Ω
= 50A
= 4.7Ω
= 800V
= 800V
= 15V
= 15V
= 15V
CE
CE
= 1200V
= 25V
7
, V
GE
= 15V,
Min
150
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT50GT120B2RDQ2R
1650
5330
2033
5670
2850
TBD
TBD
10.5
Typ
250
110
340
210
230
255
40
24
53
26
24
53
48
Typ
6.2
Max
Max
0.20
0.80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
°C/W
Unit
nC
pF
ns
µJ
ns
µJ
V
A
g