APT50GT120B2RDQ2G MICROSEMI, APT50GT120B2RDQ2G Datasheet - Page 9

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APT50GT120B2RDQ2G

Manufacturer Part Number
APT50GT120B2RDQ2G
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of APT50GT120B2RDQ2G

Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50GT120B2RDQ2G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
current goes from positive to negative, to the point at which the straight
line through I
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
passes through zero.
Figure 33, Diode Reverse Recovery Waveform and Definitions
RRM
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
T-MAX
Dimensions in Millimeters and (Inches)
and t rr .
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
di
F
®
/dt Adjust
Package Outline
1.01 (.040)
1.40 (.055)
(.177) Max.
Figure 32. Diode Test Circuit
5.45 (.215) BSC
4.50
2-Plcs.
30µH
15.49 (.610)
16.26 (.640)
Zero
V r
APT10078BLL
1
TRANSFORMER
PEARSON 2878
CURRENT
Collector
(Cathode)
5.38 (.212)
6.20 (.244)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Emitter
(Anode)
2
D.U.T.
3
4
5
APT50GT120B2RDQ2G
t rr / Q rr
Waveform
0.25 I RRM

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