APT50GT120B2RDQ2G MICROSEMI, APT50GT120B2RDQ2G Datasheet - Page 3

• Manufacturer Part Number: APT50GT120B2RDQ2G
• Manufacturer: MICROSEMI

Specifications of APT50GT120B2RDQ2G

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Compliant

Typical Performance Curves
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
FIGURE 7, Threshold Voltage vs Junction Temperature
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
150
125
100
100
150
125
75
50
25
75
50
25
6
5
4
3
2
1
0
-.50 -.25
0
0
FIGURE 1, Output Characteristics (T
8
0
V
0
CE
V
GE
TEST<0.5 % DUTY
<0.5 % DUTY CYCLE
250µs PULSE TEST
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
FIGURE 3, Transfer Characteristics
250µs PULSE
CE
= 15V
9
1
GE
2
T
T
CYCLE
T
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, GATE-TO-EMITTER VOLTAGE (V)
J
J
= 25°C.
= 125°C
J
= 125°C
, JUNCTION TEMPERATURE
10
0
2
4
T
T
J
J
T
= 55°C
T
= 25°C
11
25
J
3
J
= 25°C
= -55°C
6
12
50
4
I
I
C
I
C
8
C
13
= 50A
= 25A
75
5
= 100A
T
J
10
= 150°C
100 125
14
6
J
12
15
7
= 25°C)
16
14
150
8
150
100
100
FIGURE 8, DC Collector Current vs Case Temperature
125
FIGURE 6, On State Voltage vs Junction Temperature
25
16
14
12
10
75
50
80
60
40
20
7
6
5
4
3
2
1
0
0
8
6
4
2
0
0
FIGURE 2, Output Characteristics (T
25
V
25
0
0
CE
<0.5 % DUTY CYCLE
T
250µs PULSE TEST
I
, COLLECTOR-TO-EMITTER VOLTAGE (V)
C
J
I
C
= 25°C
= 50A
50
= 100A
15V
V
5
GE
50
50
= 15V.
T
T
J
100
, Junction Temperature (°C)
C
FIGURE 4, Gate charge
13V
, Case Temperature (°C)
I
GATE CHARGE (nC)
10
C
= 50A
75
75
150
V
15
V
CE
CE
200
APT50GT120B2RDQ2G
100
100
= 600V
= 240V
I
C
20
= 25A
250
11V
V
125
125
CE
10V
25
300
J
= 960V
9V
= 25°C)
6V
7V
8V
350
150
150
30