IHW30N120R Infineon Technologies, IHW30N120R Datasheet - Page 5

• Manufacturer Part Number: IHW30N120R
• Description: IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
• Manufacturer: Infineon Technologies

Specifications of IHW30N120R

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 30A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Compliant

Power Semiconductors
Figure 5. Typical output characteristic
50A
40A
30A
20A
10A
Figure 7. Typical transfer characteristic
0A
80A
70A
60A
50A
40A
30A
20A
10A
0A
0V
0V
V
CE
V
GE
V
,
( T
(V
=20V
COLLECTOR
GE
2V
11V
13V
j
15V
CE
9V
7V
= 25°C)
,
=20V)
GATE-EMITTER VOLTAGE
1V
4V
T
-
J
EMITTER VOLTAGE
=175°C
25°C
2V
6V
3V
8V
Soft Switching Series
5
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
80A
70A
60A
50A
40A
30A
20A
10A
0A
-50°C
0V
V
V
CE
GE
( T
saturation voltage as a function of
junction temperature
( V
T
,
=20V
COLLECTOR
J
15V
11V
13V
j
GE
,
9V
7V
= 175°C)
1V
0°C
JUNCTION TEMPERATURE
= 15V)
IHW30N120R
2V
-
50°C
EMITTER VOLTAGE
3V
100°C
Rev. 2.2
4V
I
I
C
C
=60A
=30A
I
150°C
C
=15A
May 06
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