IHW30N120R Infineon Technologies, IHW30N120R Datasheet - Page 7

• Manufacturer Part Number: IHW30N120R
• Description: IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
• Manufacturer: Infineon Technologies

Specifications of IHW30N120R

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 30A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Compliant

Power Semiconductors
Figure 13. Typical turn-off energy as a
Figure 15. Typical turn-off energy as a
4mJ
3mJ
2mJ
1mJ
0mJ
8mJ
6mJ
4mJ
2mJ
0mJ
E
off
10A
E
off
50°C
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
J
I
CE
GE
,
C
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
COLLECTOR CURRENT
20A
30A
C
GE
100°C
=30A, R
=0/15V, R
J
CE
=175°C,
=600V,
40A
G
=34Ω,
G
=34Ω,
50A
150°C
Soft Switching Series
7
Figure 14. Typical turn-off energy as a
Figure 16. Typical turn-off energy as a
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
5 mJ
4 mJ
3 mJ
2 mJ
1 mJ
0 mJ
400V
E
V
E
off
CE
off
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
,
500V
CE
COLLECTOR
GE
=600V, V
=0/15V, I
R
G
,
GATE RESISTOR
IHW30N120R
600V
-
C
GE
EMITTER VOLTAGE
=30A, R
=0/15V, I
J
J
=175°C,
=175°C,
700V
Rev. 2.2
G
=34Ω,
C
=30A,
800V
May 06
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