BSM75GD120DN2 Infineon Technologies, BSM75GD120DN2 Datasheet
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Manufacturer Part Number
BSM75GD120DN2
Description
IGBT Modules 1200V 75A 3-PHASE
Manufacturer
Infineon Technologies
Specifications of BSM75GD120DN2
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
75 A
Gate-emitter Leakage Current
320 nA
Power Dissipation
520 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
Econo3
Lead Free Status / RoHS Status
Supplier Unconfirmed
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Supplier Unconfirmed
Available stocks
Part Number:
BSM75GD120DN2
Part Number:
BSM75GD120DN2
Part Number:
BSM75GD120DN2
Manufacturer:
INFINEON/英飞凌
Part Number:
BSM75GD120DN2
BSM 75 GD 120 DN2
IGBT Power Module
• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 75 GD 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 103A
CE
I
C
1
Package
ECONOPACK 3
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67070-A2516-A67
+ 150
± 20
1200
1200
2500
0.235
103
206
150
520
0.55
F
75
16
11
Oct-01-2003
Unit
V
A
W
°C
K/W
Vac
mm
sec
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BSM75GD120DN2 Summary of contents
BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 75 GD 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...
BSM 75 GD 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage °C ...
BSM 75 GD 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 V, ...
BSM 75 GD 120 DN2 Power dissipation = ( tot C parameter: T 150 °C j 550 W 450 P tot 400 350 300 250 200 150 100 Collector current = ...
BSM 75 GD 120 DN2 Typ. output characteristics parameter µ ° 150 A 130 17V 15V 120 I 13V C 11V 110 9V 100 7V ...
BSM 75 GD 120 DN2 Typ. gate charge = ( Gate parameter puls 600 100 200 Reverse ...
BSM 75 GD 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...
BSM 75 GD 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 150 A 130 120 I F 110 100 90 T =125° ...
BSM 75 GD 120 DN2 Package Outlines Dimensions in mm Weight: 300 g Circuit Diagram 9 Oct-01-2003 ...
Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...
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