BSM75GD120DN2 Infineon Technologies, BSM75GD120DN2 Datasheet - Page 3

• Manufacturer Part Number: BSM75GD120DN2
• Description: IGBT Modules 1200V 75A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM75GD120DN2

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 320 nA
• Power Dissipation: 520 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Econo3
• Lead Free Status / RoHS Status: Supplier Unconfirmed
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Supplier Unconfirmed

BSM 75 GD 120 DN2
Electrical Characteristics, at T
Parameter
Switching Characteristics, Inductive Load at T
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Free-Wheel Diode
Diode forward voltage
I
I
Reverse recovery time
I
di
Reverse recovery charge
I
di
di
di
F
F
F
F
CC
CC
CC
CC
Gon
Gon
Goff
Goff
F
F
F
F
= 75 A, V
= 75 A, V
= 75 A, V
= 75 A, V
/dt = -900 A/µs, T
/dt = -800 A/µs, T
/dt = -800 A/µs, T
/dt = -900 A/µs, T
= 600 V, V
= 600 V, V
= 600 V, V
= 600 V, V
= 15
= 15
= 15
= 15
GE
GE
R
R
= -600 V, V
= -600 V, V
= 0 V, T
= 0 V, T
GE
GE
GE
GE
= 15 V, I
= 15 V, I
= -15 V, I
= -15 V, I
j
j
j
j
= 125 °C
= 25 °C
= 125 °C
= 25 °C
j
j
= 25 °C
= 125 °C
GE
GE
C
C
C
C
= 0 V
= 0 V
= 75 A
= 75 A
= 75 A
= 75 A
j
= 25 °C, unless otherwise specified
Symbol
t
t
t
t
V
t
Q
3
d(on)
r
d(off)
f
rr
F
rr
j
= 125 °C
min.
-
-
-
-
-
-
-
-
-
Values
typ.
30
70
450
70
2.3
1.8
0.125
3.2
10
max.
-
-
-
-
60
140
600
100
2.8
Oct-01-2003
Unit
ns
V
µs
µC