FF400R17KF6C_B2 Infineon Technologies, FF400R17KF6C_B2 Datasheet - Page 3

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FF400R17KF6C_B2

Manufacturer Part Number
FF400R17KF6C_B2
Description
IGBT Modules N-CH 1.7KV 650A
Manufacturer
Infineon Technologies
Datasheet

Specifications of FF400R17KF6C_B2

Configuration
Dual
Channel Type
N
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1700 V
Collector-emitter Saturation Voltage
2.6 V
Continuous Collector Current At 25 C
650 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
3.3 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM
Ic (max)
400.0 A
Vce(sat) (typ)
2.7 V
Technology
IGBT2 Low Loss
Housing
IHM 130 mm
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FF400R17KF6C_B2
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
FF400R17KF6C_B2
Quantity:
55
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
Technische Information / Technical Information
Transistor / transistor, DC
Diode/Diode, DC
pro Zweig / per arm
pro Modul / per module
d
FF 400 R 17 KF6C B2
Paste
100µm / d
grease
3(8)
terminals M4
terminals M8
100µm
R
R
R
T
T
M1
M2
T
thCK
G
thJC
thCK
stg
op
vj
min.
-40
-40
-
-
-
-
0,016
0,008
1050
typ.
AlN
275
15
10
-
-
-
-
-
FF400R17KF6CB2
max.
0,038
0,068
8 - 10
150
125
125
5
2
K/W
K/W
K/W
K/W
mm
mm
Nm
Nm
Nm
°C
°C
°C
g

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