FF400R17KF6C_B2 Infineon Technologies, FF400R17KF6C_B2 Datasheet - Page 6

• Manufacturer Part Number: FF400R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 650A
• Manufacturer: Infineon Technologies

Specifications of FF400R17KF6C_B2

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 650 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 3.3 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 400.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Not Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
800
700
600
500
400
300
200
100
700
600
500
400
300
200
100
0
0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
100
4
200
Eoff
Eon
Erec
Eoff
Eon
Erec
FF 400 R 17 KF6C B2
300
8
E
on
R
400
gon
6(8)
= f (I
R
= 2,7 ; R
I
E
C
G
[A]
on
[ ]
C
I
C
) , E
= 400A , V
= f (R
12
500
goff
off
=3,6
G
= f (I
CE
) , E
= 900V , T
, V
600
C
CE
off
) , E
= 900V, T
= f (R
j
16
rec
= 125°C
700
= f (I
j
G
= 125°C
) , E
C
rec
)
800
= f (R
20
G
)
FF400R17KF6CB2
900