BSM10GD120DN2E3224 Infineon Technologies, BSM10GD120DN2E3224 Datasheet - Page 6

• Manufacturer Part Number: BSM10GD120DN2E3224
• Description: IGBT Modules N-CH 1.2KV 15A
• Manufacturer: Infineon Technologies

Specifications of BSM10GD120DN2E3224

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 15 A
• Gate-emitter Leakage Current: 120 nA
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2
• Lead Free Status / RoHS Status: Supplier Unconfirmed

BSM 10 GD 120 DN2 E3224
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
I
Cpuls
parameter: V
Cpuls
V
GE
GE
/I
C
= (Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
200
C puls
10
)
GE
)
,
= 15 V
T
400
= 10 A
j
20
= 150°C
600
30
600 V
800 1000 1200
40
50
800 V
nC
Q
V
V
Gate
CE
1600
70
6
Typ. capacitances
C = f (V
Short circuit safe operating area
I
I
parameter: V
Csc
parameter: V
Csc
C
/I
C
= f(V
10
10
10
10
pF
12
8
6
4
2
0
4
3
2
1
CE
0
0
CE
)
) , T
200
5
GE
GE
j
= ± 15 V, t
= 150°C
400
= 0 V, f = 1 MHz
10
600
15
800 1000 1200
20
SC
25
10 µs, L < 50 nH
30
2006-02-01
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40