BSM10GD120DN2E3224 Infineon Technologies, BSM10GD120DN2E3224 Datasheet - Page 7

• Manufacturer Part Number: BSM10GD120DN2E3224
• Description: IGBT Modules N-CH 1.2KV 15A
• Manufacturer: Infineon Technologies

Specifications of BSM10GD120DN2E3224

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 15 A
• Gate-emitter Leakage Current: 120 nA
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2
• Lead Free Status / RoHS Status: Supplier Unconfirmed

BSM 10 GD 120 DN2 E3224
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
C
ns
C
) , inductive load , T
CE
CE
7
5
4
3
2
1
0
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
5
5
GE
GE
10
10
= ± 15 V, R
= ± 15 V, R
j
j
= 125°C
= 125°C
15
15
G
G
= 150
= 150
A
A
tdoff
tr
tdon
tf
Eon
Eoff
I
I
C
C
25
25
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
ns
G
CE
CE
7
5
4
3
2
1
0
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 600 V, V
= 600V, V
50
50
100
100
GE
GE
150
150
= ± 15 V, I
= ± 15 V, I
j
200
200
j
= 125°C
= 125°C
250
250
C
C
= 10 A
= 10 A
tdoff
tdon
tr
tf
Eon
Eoff
2006-02-01
R
R
G
G
350
350