BSM50GB120DLC Infineon Technologies, BSM50GB120DLC Datasheet

BSM50GB120DLC

Manufacturer Part Number

BSM50GB120DLC

Description

IGBT MODULE, DUAL, 1200V

Manufacturer

Infineon Technologies

Datasheet

1.BSM50GB120DLC.pdf (9 pages)

Specifications of BSM50GB120DLC

Channel Type

Configuration

Dual

Collector-emitter Voltage

1.2kV

Gate To Emitter Voltage (max)

±20V

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

125C

Operating Temperature Classification

Automotive

Module Configuration

Dual

Dc Collector Current

115A

Collector Emitter Voltage Vces

2.6V

Power Dissipation Max

460W

Collector Emitter Voltage V(br)ceo

1.2kV

Operating Temperature Range

-40Â°C To +125Â°C

Power Dissipation Pd

460W

Rohs Compliant

Yes

Ic (max)

50.0 A

Vce(sat) (typ)

2.1 V

Technology

IGBT2 Low Loss

Housing

34 mm

Lead Free Status / RoHS Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

BSM50GB120DLC

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

BSM50GB120DLC

Quantity:

Company:

H&T Electronics

Part Number:

BSM50GB120DLC

Quantity:

200

Current page: 1 of 9
Download datasheet (144Kb)

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

Kollektor-Dauergleichstrom

DC-collector current

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

Dauergleichstrom

DC forward current

Periodischer Spitzenstrom

repetitive peak forw. current

Grenzlastintegral der Diode

Isolations-Prüfspannung

insulation test voltage

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

Gate-Schwellenspannung

gate threshold voltage

Gateladung

gate charge

Eingangskapazität

input capacitance

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

Gate-Emitter Reststrom

gate-emitter leakage current

prepared by: MOD-D2, Mark Münzer

approved by: SM TM; Wilhelm Rusche

IGBT-Module

IGBT-Modules

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Transistor / Transistor

Technische Information / Technical Information

t - value, Diode

RMS, f = 50 Hz, t = 1 min.

f = 1MHz,T

date of publication: 2003-01-10

revision: 3.0

BSM50GB120DLC

= 1 ms, T

= 1 ms

= 25° C

=25°C, Transistor

= 50A, V

= 2mA, V

= 80 °C

= 25 °C

= 0V, t

= 1200V, V

= 0V, V

= -15V...+15V

= 10ms, T

= 25°C,V

= 80°C

= 15V, T

= V

= 20V, T

= 0V, T

, T

= 125°C

= 25°C

= 125°C

= 25°C

= 25V, V

= 25°C

1(8)

= 25°C

= 0V

C,nom.

CRM

CE sat

GE(th)

FRM

CES

GES

ISOL

CES

GES

res

tot

ies

min.

4,5

+/- 20V

1200

typ.

0,53

0,21

115

100

460

100

430

2,5

2,1

2,4

5,5

3,3

max.

400

2,6

2,9

6,5

DB_BSM50GB120DLC_3.0

µC

2003-01-10

Related parts for BSM50GB120DLC

BSM50GB120DLC Summary of contents

Page 1

... V 1200 V CES C,nom. I 115 100 A CRM P 460 W tot V +/- 20V V GES 100 A FRM 2 2 430 2,5 kV ISOL min. typ. max 2,1 2 sat - 2,4 2 4,5 5,5 6,5 V GE(th 0,53 - µ 3 ies res CES 400 nA GES DB_BSM50GB120DLC_3.0 2003-01-10 ...

Page 2

... GE vj 2(8) min. typ. max 0,05 - µs d,on - 0,06 - µ 0,05 - µ 0,05 - µ 0,25 - µs d,off - 0,30 - µ 0,03 - µ 0,07 - µ 6 6 off I - 400 - 1 CC‘+EE‘ min. typ. max 1,8 2 1,7 2 5,1 - µ 10,7 - µ 1 rec - DB_BSM50GB120DLC_3.0 2003-01-10 ...

Page 3

... BSM50GB120DLC Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = grease Schraube / screw M6 Anschlüsse / terminals M5 3(8) min. typ. max 0,27 K/W thJC - - 0,60 K 0,05 - K/W thCK 150 °C vj max T -40 - 125 ° -40 - 125 °C stg 275 M 3 2 250 g DB_BSM50GB120DLC_3.0 2003-01-10 ...

Page 4

... Ausgangskennlinienfeld (typisch) Output characteristic (typical) 100 90 VGE = 17V 80 VGE = 15V 70 VGE = 13V VGE = 11V 60 VGE = 9V VGE = 0,0 0,5 1,0 BSM50GB120DLC 15V GE 1,5 2,0 2,5 V [V] CE 1,5 2,0 2,5 3,0 3,5 V [ 3,0 3,5 4 125°C vj 4,0 4,5 5,0 DB_BSM50GB120DLC_3.0 2003-01-10 ...

Page 5

... Transfer characteristic (typical) 100 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 100 0,0 0,5 BSM50GB120DLC Tvj = 25°C Tvj = 125° [V] GE Tvj = 25°C Tvj = 125°C 1,0 1,5 2,0 V [ 20V 2,5 3,0 DB_BSM50GB120DLC_3.0 2003-01-10 ...

Page 6

... Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical Eoff Eon 14 Erec Schaltverluste (typisch) Switching losses (typical) 28 Eoff 24 Eon Erec BSM50GB120DLC off C V =±15V 600V [ off V =±15V , I = 50A , V = 600V , 6( rec C = 125° 100 = rec G = 125°C vj 100 120 140 DB_BSM50GB120DLC_3.0 2003-01-10 ...

Page 7

... Reverse bias safe operation area (RBSOA) 120 100 80 IC,Modul IC,Chip 200 BSM50GB120DLC Z thJC 0 52,7 177,41 0,009 0,045 35,54 261,69 0,003 0,022 V =±15V 400 600 800 1000 V [ (t) Zth:Diode Zth:IGBT 14,08 25,81 0,073 0,229 232,72 70,05 0,064 0,344 = 125° 1200 1400 DB_BSM50GB120DLC_3.0 2003-01-10 ...

Page 8

... Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GB120DLC 8(8) DB_BSM50GB120DLC_3.0 2003-01-10 ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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