BSM50GB120DLC Infineon Technologies, BSM50GB120DLC Datasheet - Page 7

• Manufacturer Part Number: BSM50GB120DLC
• Description: IGBT MODULE, DUAL, 1200V
• Manufacturer: Infineon Technologies

Specifications of BSM50GB120DLC

• Channel Type: N
• Configuration: Dual
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Module Configuration: Dual
• Dc Collector Current: 115A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Max: 460W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Power Dissipation Pd: 460W
• Rohs Compliant: Yes
• Ic (max): 50.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
1
0,001
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
120
100
80
60
40
20
0
Transienter Wärmewiderstand
Transient thermal impedance
0
r
r
i
i
[K/kW]
[K/kW]
i
i
i
[s]
[s]
IC,Modul
IC,Chip
200
: IGBT
: IGBT
: Diode
: Diode
0,01
BSM50GB120DLC
400
0,009
35,54
0,003
52,7
1
600
0,1
7(8)
V
177,41
261,69
0,045
0,022
CE
800
2
[V]
t [s]
Z
thJC
V
GE
=±15V, R
1000
= f (t)
232,72
Zth:Diode
Zth:IGBT
14,08
0,073
0,064
1
3
G
= 15
1200
, T
vj
25,81
0,229
70,05
0,344
= 125°C
4
1400
10
DB_BSM50GB120DLC_3.0
2003-01-10