BSM100GD120DN2 Infineon Technologies, BSM100GD120DN2 Datasheet

BSM100GD120DN2

Manufacturer Part Number

BSM100GD120DN2

Description

IGBT Modules 1200V 100A FL BRIDGE

Manufacturer

Infineon Technologies

Datasheet

1.BSM100GD120DN2.pdf (10 pages)

Specifications of BSM100GD120DN2

Configuration

Hex

Channel Type

Collector-emitter Voltage

1.2kV

Collector Current (dc) (max)

150A

Gate To Emitter Voltage (max)

±20V

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

150C

Operating Temperature Classification

Automotive

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

2.5 V

Continuous Collector Current At 25 C

150 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

680 W

Maximum Operating Temperature

+ 150 C

Maximum Gate Emitter Voltage

20 V

Mounting Style

Screw

Package / Case

EconoPACK 3A

Module Configuration

Six

Dc Collector Current

150A

Collector Emitter Voltage Vces

Power Dissipation Pd

680W

Collector Emitter Voltage V(br)ceo

1.2kV

Operating Temperature Range

-40Â°C To +125Â°C

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Supplier Unconfirmed

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Supplier Unconfirmed

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSM100GD120DN2

Manufacturer:

Infineon Technologies

Quantity:

135

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSM100GD120DN2

Manufacturer:

EUPEC

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSM100GD120DN2

Manufacturer:

Quantity:

300

Company:

Meier Automation Equipment Co., Limited

Part Number:

BSM100GD120DN2

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

BSM100GD120DN2

Quantity:

Current page: 1 of 10
Download datasheet (299Kb)

BSM 100 GD 120 DN2

IGBT Power Module

• Solderable Power module

• 3-phase full-bridge

• Including fast free-wheel diodes

• Package with insulated metal base plate

Type

BSM 100 GD 120 DN2

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

Gate-emitter voltage

DC collector current

Pulsed collector current, t

Power dissipation per IGBT

Chip temperature

Storage temperature

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage, t = 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

= 25 °C

= 80 °C

= 25 °C

= 80 °C

= 25 °C

= 20 k

= 1 ms

1200V 150A

Package

ECONOPACK 3

Symbol

Cpuls

CGR

tot

stg

thJC

thJCD

40 / 125 / 56

-40 ... + 125

Values

Ordering Code

C67070-A2517-A67

+ 150

± 20

1200

2500

0.182

150

100

300

200

680

0.36

Aug-27-2001

Unit

°C

K/W

Vac

sec

Related parts for BSM100GD120DN2

BSM100GD120DN2 Summary of contents

Page 1

BSM 100 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 100 GD 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...

Page 2

BSM 100 GD 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 100 ...

Page 3

BSM 100 GD 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 6.8 Gon Rise time V = 600 V, ...

Page 4

BSM 100 GD 120 DN2 Power dissipation = ( tot C parameter: T 150 °C j 700 W 600 P 550 tot 500 450 400 350 300 250 200 150 100 ...

Page 5

BSM 100 GD 120 DN2 Typ. output characteristics parameter µ ° 200 A 17V 15V 160 I 13V C 11V 140 9V 7V 120 100 ...

Page 6

BSM 100 GD 120 DN2 Typ. gate charge = ( Gate parameter 100 A C puls 600 100 200 300 ...

Page 7

BSM 100 GD 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...

Page 8

BSM 100 GD 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 200 A 160 I F 140 120 T =125°C j 100 0.0 0.5 1.0 ...

Page 9

BSM 100 GD 120 DN2 Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics valid with the ...

Page 10

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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