BSM100GD120DN2 Infineon Technologies, BSM100GD120DN2 Datasheet - Page 9

• Manufacturer Part Number: BSM100GD120DN2
• Description: IGBT Modules 1200V 100A FL BRIDGE
• Manufacturer: Infineon Technologies

Specifications of BSM100GD120DN2

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 150A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 150 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 680 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Module Configuration: Six
• Dc Collector Current: 150A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Pd: 680W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Supplier Unconfirmed
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Supplier Unconfirmed

BSM 100 GD 120 DN2
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
Econo3
not connected: 16,18
9
Aug-27-2001