BSM35GP120 Infineon Technologies, BSM35GP120 Datasheet - Page 10

• Manufacturer Part Number: BSM35GP120
• Description: IGBT Modules 1200V 35A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM35GP120

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 45 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
100000
10000
1000
70
60
50
40
30
20
10
100
0
0
Durchlaßkennlinie der Gleichrichterdiode (typisch)
Forward characteristic of Rectifier Diode (typical)
0
NTC- Temperaturkennlinie (typisch)
NTC- temperature characteristic (typical)
0,2
20
0,4
40
BSM35GP120
Tj = 25°C
Tj = 150°C
0,6
60
T
V
C
F
10(11)
[°C]
[V]
Rtyp
0,8
80
R = f (T)
100
1
I
F
= f (V
120
1,2
F
)
140
1,4
160
1,6
DB-PIM-10 (2).xls