BSM35GP120 Infineon Technologies, BSM35GP120 Datasheet - Page 7

• Manufacturer Part Number: BSM35GP120
• Description: IGBT Modules 1200V 35A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM35GP120

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 45 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
7
6
5
4
3
2
1
0
14
12
10
0
8
6
4
2
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
0
5
10
10
Eon
Eoff
Erec
Eon
Eoff
Erec
20
15
BSM35GP120
30
20
R
I
C
G
[A]
7(11)
E
[ ]
T
E
T
on
j
= 125°C,
j
on
= 125°C, V
25
= f (I
40
= f (R
C
), E
G
), E
30
GE
off
V
= +-15 V ,
off
GE
= f (I
50
= ±15 V,
= f (R
C
), E
35
G
), E
rec
I
c
60
= I
= f (I
rec
nenn
R
40
Gon
= f (R
C
,
)
= R
V
V
CC
CC
G
Goff
70
)
=
=
45
=
600 V
22 Ohm
600 V
DB-PIM-10 (2).xls
80
50