FZ1200R12KE3 Infineon Technologies, FZ1200R12KE3 Datasheet

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FZ1200R12KE3

Manufacturer Part Number
FZ1200R12KE3
Description
IGBT Transistors 1200V 1200A SINGLE
Manufacturer
Infineon Technologies
Datasheet
1.FZ1200R12KE3.pdf (9 pages)

Specifications of FZ1200R12KE3

Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Configuration
Dual Common Emitter Common Gate
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
1200 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
5.6 W
Maximum Operating Temperature
+ 125 C
Package / Case
IHM 130X140-7
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Ic (max)
1,200.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
IHM 130 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FZ1200R12KE3
Manufacturer:
Infinoen
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
FZ1200R12KE3
Quantity:
55
Kollektor Emitter Sperrspannung
collector emitter voltage
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
Grenzlastintegral
I²t value
Isolations Prüfspannung
insulation test voltage
Kollektor Emitter Sättigungsspannung
collector emitter satration voltage
Gate Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor Emitter Reststrom
collector emitter cut off current
Gate Emitter Reststrom
gate emitter leakage current
prepared by: MOD-D2; Mark Münzer
approved: SM TM; Christoph Lübke
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Technische Information / technical information
T
T
T
t
T
t
V
RMS, f= 50Hz, t= 1min.
I
I
I
V
f= 1MHz, T
f= 1MHz, T
V
V
date of publication: 2002-07-29
revision: 2.0
p
p
C
C
C
vj
c
c
= 1ms, T
c
= 1ms
R
GE
CE
CE
= 1200A, V
= 1200A, V
= 48mA, V
= 80°C
= 25°C
= 25°C; Transistor
= 25°C
= 0V, t
= 1200V, V
= 0V, V
= -15V...+15V; V
p
FZ1200R12KE3
= 10ms, T
c
= 80°C
GE
vj
vj
CE
= 25°C, V
= 25°C, V
GE
GE
= 20V, T
1 (8)
= V
GE
= 15V, T
= 15V, T
= 0V, T
GE
, T
vj
CE
= 125°C
CE
CE
vj
=...V
vj
= 25°C
vj
vj
= 25°C,
= 25V, V
= 25V, V
vj
= 25°C,
= 125°C,
= 25°C,
GE
GE
= 0V
= 0V
V
I
V
V
V
V
C, nom
I
I
I
I
C
C
P
CRM
GE(th)
Q
FRM
CEsat
CES
GES
I²t
ISOL
CES
I
GES
I
C
tot
F
ies
res
G
vorläufige Daten
preliminary data
min.
5
-
-
-
-
-
-
-
DB_FZ1200R12KE3_2.0.xls
+/- 20
1200
1200
1700
2400
1200
2400
11,5
typ.
300
5,6
2,5
1,7
5,8
86
2
4
-
-
max.
t.b.d.
2,15
400
6,5
2002-07-29
5
-
-
-
k A²s
kW
mA
µC
kV
nF
nF
nA
V
A
A
A
V
A
A
V
V
V

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FZ1200R12KE3 Summary of contents

Page 1

... Daten preliminary data V 1200 V CES 1200 nom I 1700 2400 A CRM P 5,6 kW tot V +/- 20 V GES I 1200 2400 A FRM I²t 300 k A²s V 2,5 kV ISOL min. typ. max. - 1,7 2, CEsat - 2 t.b. 5,8 6,5 V GE(th 11,5 - µ ies res CES 400 nA GES DB_FZ1200R12KE3_2.0.xls 2002-07-29 ...

Page 2

... E - 245 - 190 - mJ off I - 4800 - sCE CC´/EE´ - 2 390 620 µ 150 µ rec DB_FZ1200R12KE3_2.0.xls 2002-07-29 ...

Page 3

... Schraube /screw M5 Anschlüsse / terminal M4 Anschlüsse / terminal M8 3 (8) vorläufige Daten preliminary data min. typ. max 0,022 K/W thJC 0,040 K/W thJC R - 0,006 - K/W thCK 150 °C vj max T -40 - 125 ° -40 - 125 °C stg >400 M 4, 1 1500 g DB_FZ1200R12KE3_2.0.xls 2002-07-29 ...

Page 4

... Vge=9V 1200 900 600 300 0 0,0 0,5 1,0 FZ1200R12KE3 Tvj = 25°C Tvj = 125°C 1,0 1,5 2,0 V [V] CE 1,5 2,0 2,5 3 (8) vorläufige Daten preliminary data 15V GE 2,5 3 125°C vj 3,5 4,0 4,5 5,0 DB_FZ1200R12KE3_2.0.xls 2002-07-29 ...

Page 5

... Tvj = 25°C Tvj = 125°C 1500 1200 900 600 300 0 0,0 0,2 0,4 FZ1200R12KE3 [V] GE 0,6 0,8 1,0 1,2 1,4 1 (8) vorläufige Daten preliminary data 20V f 1,8 2,0 2,2 2,4 2,6 DB_FZ1200R12KE3_2.0.xls 2002-07-29 ...

Page 6

... FZ1200R12KE3 =±15V, R =1,8W gon 600 900 1200 1500 I [ =±15V, I =1200A Eon Eoff Erec [ (8) vorläufige Daten preliminary data = off C rec C =0,62W, V =600V, T =125°C goff CE vj 1800 2100 2400 = off G rec G =600V, T =125° DB_FZ1200R12KE3_2.0.xls 2002-07-29 ...

Page 7

... V GE IC,Chip 400 600 800 V [ (8) vorläufige Daten preliminary data = f (t) Zth : IGBT Zth : Diode 8,49 2,26 3,820E-03 13,23 2,69 2,850E-03 =±15V, T =125°C vj 1000 1200 1400 DB_FZ1200R12KE3_2.0.xls 2002-07-29 ...

Page 8

... M8 18.25 ± 0.5 ± 0 ± 0.5 14 ± 0 ± 0 10.35 (für M6-Schraube) ø7 ± 0.2 ± 0.2 +0.1 ± 0.2 8 (8) vorläufige Daten preliminary data C C (K) ( (A) (A) DD... FD... external connection (to be done) FZ... IH4 DB_FZ1200R12KE3_2.0.xls 2002-07-29 ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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