FZ1200R12KE3 Infineon Technologies, FZ1200R12KE3 Datasheet - Page 3

• Manufacturer Part Number: FZ1200R12KE3
• Description: IGBT Transistors 1200V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R12KE3

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 5.6 W
• Maximum Operating Temperature: + 125 C
• Package / Case: IHM 130X140-7
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemp.
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment, mech. Befestigung
mounting torque
Anzugsdrehmoment, elektr. Anschlüsse
terminal connection torque
Gewicht
weight
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / thermal properties
Mechanische Eigenschaften / mechanical properties
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid
with the belonging technical notes.
Technische Information / technical information
pro Transistor /per transistor, DC
pro Diode/per Diode, DC
pro Modul / per module
l
Schraube /screw M5
Anschlüsse / terminal M4
Anschlüsse / terminal M8
Paste
/l
grease
FZ1200R12KE3
=1W/m*K
3 (8)
T
R
R
R
T
T
vj max
M
M
M
thCK
vj op
G
thJC
thJC
stg
vorläufige Daten
preliminary data
min.
4,25
-40
-40
1,7
8
-
-
-
-
DB_FZ1200R12KE3_2.0.xls
0,006
Al
>400
1500
typ.
32
20
2
-
-
-
-
-
-
-
-
O
3
0,022
0,040
max.
5,75
150
125
125
2,3
10
2002-07-29
-
K/W
K/W
K/W
mm
mm
Nm
Nm
Nm
°C
°C
°C
g