FS75R12KE3G Infineon Technologies, FS75R12KE3G Datasheet - Page 7
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FS75R12KE3G
Manufacturer Part Number
FS75R12KE3G
Description
IGBT Modules 1200V 75A 3-PHASE
Manufacturer
Infineon Technologies
Datasheet
1.FS75R12KE3G.pdf
(8 pages)
Specifications of FS75R12KE3G
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Continuous Collector Current At 25 C
105 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
355 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 3B
Ic (max)
75.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
EconoPACK 2
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FS75R12KE3G
Manufacturer:
INFINEON
Quantity:
200
Part Number:
FS75R12KE3G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FS75R12KE3G
Quantity:
55
Technische Information / technical information
IGBT-Module
FS75R12KE3G
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
7