BSM50GP60G Infineon Technologies, BSM50GP60G Datasheet - Page 10
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BSM50GP60G
Manufacturer Part Number
BSM50GP60G
Description
IGBT Modules 600V 50A PIM
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GP60G.pdf
(12 pages)
Specifications of BSM50GP60G
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.2 V
Continuous Collector Current At 25 C
70 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM3
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM50GP60G
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
BSM50GP60G
Quantity:
50
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
100000
10000
1000
100
100
90
80
70
60
50
40
30
20
10
0
Durchlaßkennlinie der Gleichrichterdiode (typisch)
Forward characteristic of Rectifier Diode (typical)
0
0
NTC- Temperaturkennlinie (typisch)
NTC- temperature characteristic (typical)
0,2
20
0,4
40
BSM50GP60G
0,6
Tj = 25°C
Tj = 150°C
60
0,8
T
V
C
F
10(11)
[°C]
[V]
Rtyp
80
1
R = f (T)
1,2
100
I
F
1,4
= f (V
120
F
)
1,6
140
1,8
160
2
DB-PIM-10.xls