BSM50GP60G Infineon Technologies, BSM50GP60G Datasheet - Page 9

• Manufacturer Part Number: BSM50GP60G
• Description: IGBT Modules 600V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM50GP60G

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
0
0
Durchlaßkennlinie der Brems-Chopper-Diode (typisch)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
Output characteristic brake-chopper-IGBT (typical)
0,5
0,5
1
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
BSM50GP60G
1,5
V
1
V
CE
F
9(11)
2
[V]
[V]
2,5
1,5
3
I
F
= f (V
I
C
V
= f (V
GE
3,5
F
)
= 15 V
2
CE
)
4
4,5
2,5
DB-PIM-10.xls