BSM100GB170DL Infineon Technologies, BSM100GB170DL Datasheet - Page 3

• Manufacturer Part Number: BSM100GB170DL
• Description: IGBT Modules N-CH 1.7KV 200A
• Manufacturer: Infineon Technologies

Specifications of BSM100GB170DL

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 200A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Compliant

I
[A]
I
[A]
E
[mJ]
C
C
220
200
180
160
140
120
100
220
200
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0,0
5
0
BSM 100 GB 170 DL / 1
Bild / Fig. 1
Ausgangskennlinie (typisch) /
Output characteristic (typical)
I
V
BSM 100 GB 170 DL / 3
Bild / Fig. 3
Übertragungscharakteristic (typisch) /
Transfer characteristic (typical)
I
V
Bild / Fig. 5
Schaltverluste (typisch) /
Switching losses (typical)
E
R
C
C
GE
CE
on
gon
= f(V
= f(V
= f (I
= 15V
= 20V
= R
20
0,5
CE
GE
C
goff
6
)
)
), E
= 15 , V
40
1,0
off
= f (I
7
60
1,5
C
CE
), E
= 900V, T
Tj = 25°C
Tj = 125°C
rec
80
2,0
8
= f (I
100
C
j
)
2,5
= 125°C
9
120
3,0
10
140
3,5
160
11
4,0
V
V
I
Tj = 25°C
Tj = 125°C
C
CE
GE
180
[A]
[V]
[V]
Eon
Erec
4,5
Eoff
12
200
5,0
220
13
I
[A]
I
[A]
E
[mJ]
C
F
120
100
220
200
180
160
140
120
100
220
200
180
160
140
120
100
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0,0
0,0
0
BSM 100 GB 170 DL / 2
Bild / Fig. 2
Ausgangskennlinienfeld (typisch) /
Output characteristic (typical)
I
T
BSM 100 GB 170 DL / 4
Bild / Fig. 4
Durchlaßkennlinie der Inversdiode (typisch) /
Forward characteristic of inverse diode (typical)
I
BSM 100 GB 170 DL / 6
Bild / Fig. 6
Schaltverluste (typisch) /
Switching losses (typical)
E
I
C
F
C
vj
on
= f(V
= f(V
= 100A, V
= 125°C
= f (R
0,5
F
CE
)
10
)
G
), E
0,5
CE
1,0
off
= 900V, T
= f (R
20
1,5
G
1,0
), E
j
Tj = 25°C
Tj = 125°C
= 125°C
2,0
rec
30
= f (R
2,5
1,5
G
)
BSM 100 GB 170 DL
40
3,0
2,0
50
3,5
V
GE
= 19V
4,0
R
V
V
60
G
CE
F
[V]
[ ]
2,5
[V]
4,5
Eon
V
V
Eoff
Erec
V
GE
V
GE
GE
GE
= 15V
= 11V
70
= 9V
= 13V
5,0
3,0