BSM100GB170DL Infineon Technologies, BSM100GB170DL Datasheet - Page 4

• Manufacturer Part Number: BSM100GB170DL
• Description: IGBT Modules N-CH 1.7KV 200A
• Manufacturer: Infineon Technologies

Specifications of BSM100GB170DL

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 200A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Compliant

I
[A]
C
220
200
180
160
140
120
100
80
60
40
20
0
0
BSM 100 GB 170 DL / 7
Bild / Fig. 7
Sicherer Arbeitsbereich (RBSOA) /
Reverse bias safe operation area (RBSOA)
R
g
= 15 , T
200
vj
= 125°C
IC,Modul
IC,Chip
400
600
800
1000
1200
1400
V
CE
[V]
1600
1800
BSM 100 GB 170 DL