IPB70N10SL16XT Infineon Technologies, IPB70N10SL16XT Datasheet - Page 3

• Manufacturer Part Number: IPB70N10SL16XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPB70N10SL16XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.016Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 70A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Power Dissipation: 250W
• Lead Free Status / RoHS Status: Compliant

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
j
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
V
t
Q
= 25 °C, unless otherwise specified
d(on)
r
d(off)
f
S
SM
rr
fs
(plateau) V
SD
iss
oss
rss
gs
gd
g
rr
V
I
V
f =1MHz
V
I
V
V
V
T
V
V
d i
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
=50A
=70A, R
=25°C
=50V, I
/d t =100A/µs
≥2*I
=0V, V
=50V, V
=80V, I
=80V, I
=0 to 10V
=80V, I
=0V, I
Conditions
D
*R
F =
G
F
DS
D
D
D
=140A
=1.3Ω
DS(on)max
GS
l
S
=70A
=70A,
=70A
=25V,
,
=4.5V,
IPP70N10SL-16, IPB70N10SL-16
,
min.
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3630
3.22
typ.
640
345
250
250
160
100
600
1.2
65
70
95
10
34
-
-
IPI70N10SL-16
2006-02-14
max.
4540
800
430
105
375
375
145
240
280
150
900
1.8
15
51
70
-
-
Unit
S
pF
ns
nC
V
A
V
ns
nC