SI3210-FTR Silicon Laboratories Inc, SI3210-FTR Datasheet - Page 15
![no-image](/images/manufacturer_photos/0/6/609/silicon_laboratories_inc_sml.jpg)
SI3210-FTR
Manufacturer Part Number
SI3210-FTR
Description
SLIC 1-CH 60dB 41mA 3.3V/5V 38-Pin TSSOP T/R
Manufacturer
Silicon Laboratories Inc
Series
ProSLIC®r
Specifications of SI3210-FTR
Package
38TSSOP
Number Of Channels Per Chip
1
Polarity Reversal
Yes
Longitudinal Balanced
60 dB
Loop Current
41 mA
Minimum Operating Supply Voltage
3.13 V
Typical Operating Supply Voltage
3.3|5 V
Typical Supply Current
88 mA
Function
Subscriber Line Interface Concept (SLIC), CODEC
Interface
PCM, SPI
Number Of Circuits
1
Voltage - Supply
3.3V, 5V
Current - Supply
88mA
Power (watts)
700mW
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
38-TSSOP
Includes
BORSCHT Functions, DTMF Generation and Decoding, FSK Generation, Pulse Metering Generation, Voice Loopback Test Modes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3210-FTR
Manufacturer:
SILCONX
Quantity:
160
Part Number:
SI3210-FTR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Table 10. Switching Characteristics (SPI)
V
Cycle Time SCLK
Rise Time, SCLK
Fall Time, SCLK
Delay Time, SCLK Fall to SDO Active
Delay Time, SCLK Fall to SDO
Transition
Delay Time, CS Rise to SDO Tri-state
Setup Time, CS to SCLK Fall
Hold Time, CS to SCLK Rise
Setup Time, SDI to SCLK Rise
Hold Time, SDI to SCLK Rise
Delay Time between Chip Selects
(Continuous SCLK)
Delay Time between Chip Selects
(Non-continuous SCLK)
SDI to SDITHRU Propagation Delay
Note: All timing is referenced to the 50% level of the waveform. Input test levels are V
DDA
= V
DDA
= 3.13 to 5.25 V, T
SCLK
Parameter
SDO
SDI
CS
A
t
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade, C
su1
t
d1
t
r
Figure 7. SPI Timing Diagram
Symbol
t
t
t
t
t
t
t
t
t
t
su1
su2
t
d1
d2
d3
h1
h2
d4
t
t
cs
cs
c
r
f
Rev. 1.45
t
su2
t
Conditions
t
c
thru
t
d2
Test
t
h2
0.062
Min
440
220
25
20
25
20
—
—
—
—
—
—
IH
L
= 20 pF
= V
t
Si3210/Si3211
r
t
DDD
h1
Typ
—
—
—
—
—
—
—
—
—
—
—
—
4
–0.4 V, V
t
cs
t
d3
Max
IL
25
25
20
20
20
10
—
—
—
—
—
—
—
= 0.4 V
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
15