MT48H32M16LFCJ-8:A Micron Technology Inc, MT48H32M16LFCJ-8:A Datasheet - Page 29

• Manufacturer Part Number: MT48H32M16LFCJ-8:A
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H32M16LFCJ-8:A

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 9/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 85mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 17:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
Terminating a READ Burst
Notes:
Fixed-length READ bursts may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST TERMINATE command
should be issued x cycles before the clock edge at which the last desired data element is
valid, where x = CL - 1. This is shown in Figure 17 on page 29 for each possible CL; data
element n + 3 is the last desired data element of a longer burst.
COMMAND
1. DQM is LOW.
COMMAND
ADDRESS
ADDRESS
CLK
CLK
DQ
DQ
BANK,
COL n
T0
T0
BANK,
COL n
READ
READ
CL = 2
T1
T1
NOP
NOP
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
CL = 3
29
T2
T2
NOP
NOP
D
OUT
n
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T3
T3
NOP
NOP
D
n + 1
D
OUT
OUT
n
TERMINATE
TERMINATE
T4
BURST
T4
BURST
X = 1 cycle
D
n + 2
D
n + 1
OUT
OUT
X = 2 cycles
T5
T5
NOP
NOP
D
n + 3
D
n + 2
OUT
OUT
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T6
T6
NOP
NOP
D
n + 3
OUT
DON’T CARE
Operations
T7
NOP