TLP822 Toshiba, TLP822 Datasheet
TLP822
Specifications of TLP822
Related parts for TLP822
TLP822 Summary of contents
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... TLP822(F),TLP827(F) Lead Free Product Vcrs, Compact Disc Players Floppy Disk Drives,Fax Machines, Printers Vending Machines Various Position Detection Sensors The TLP822(F) and TLP827(F) photo−interrupters combine a high−radiant−power GaAs infrared LED with an Si phototransistor. • Small package • Side mounting type: TLP822(F) • ...
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... V CEO ECO −1 ∆P / ° ° −25~85 T °C opr −25~95 −40~100 T °C stg T 260 °C sol Symbol Min Typ. Max V ― ― −10 T ― 75 opr 2 TLP822(F),TLP827(F) Abbreviation Type P822 TLP822(F) P827 TLP827(F) Letter color: Silver Unit V mA °C 2004-02-12 ...
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... D CEO CE F λ ― =2V,I =10mA =20mA,I =0.5mA CE(sat =5V,I =1mA,R =1kΩ TLP822(F),TLP827(F) Min Typ. Max Unit 1.00 1.15 1.30 V ― ― 10 µA ― 940 ― nm ― ― 0.1 µA ― 870 ― ― ― 0.1 0.4 V ― µs ― ...
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... Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output ( ( Chemicals 1, 2−dichloroethane) 4 TLP822(F),TLP827(F) 2004-02-12 ...
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... Package Dimensions Weight: 0.87 g (typ.) Pin Connection Anode 2. Cathode 3. Collector 4. Emitter TLP822(F),TLP827(F) 5 2004-02-12 ...
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... Package Dimensions Weight: 0.72 g (typ.) Pin Connection Anode 2. Cathode 3. Collector 4. Emitter TLP822(F),TLP827(F) 6 2004-02-12 ...
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... ° -25 1 0.8 0.9 1.0 1.1 1.2 1.3 Forward voltage V F (V) I – ° 0 Sample 2 Sample 1 1 0.5 0.3 0 Forward current I F (mA) TLP822(F),TLP827( 100 Ambient temperature Ta (° 100 ° 0 Sample 2 10 Sample 1.4 Forward current I F (mA ° 100 Collector-emitter voltage V CE (V) 7 – ...
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... Ambient temperature Ta (°C) Switching characteristics (non saturated operation) (typ.) 500 Ta = 25°C 300 OUT = 1V 100 0.5 0.3 0.1 0.3 0 Load resistance R L (kΩ) TLP822(F),TLP827( CEO 24V - 100 - Ambient temperature Ta (°C) Switching time test circuit OUT R L 100 Switching characteristics (saturated operation) 3000 Ta = 25° ...
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... 10mA 1 25° 0.8 shutter 0.6 0.4 Detection position ± 1.05mm 0.2 0 -1.5 -1 -0.5 0 0.5 1 1.5 Distance d (mm) TLP822(F) Detection Position Characteristics (2) 1 20mA 0 25°C 0.6 0.4 0 Distance d (mm) TLP827(F) Detection Position Characteristics (2) 1.2 1.0 + 0.8 0.6 0.4 0 ...
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... For normal operation position the shutter and the device as shown in the figure below. By considering the device’s detection position characteristic and switching time, determine the shutter slit width and pitch. TLP822(F) A Shutter A’ Unit in mm Center of sensor Cross section between A and A’ 10 TLP822(F),TLP827(F) 2004-02-12 ...
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... TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. TLP822(F),TLP827(F) 11 030619EAC 2004-02-12 ...