TLP822 Toshiba, TLP822 Datasheet - Page 7

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TLP822

Manufacturer Part Number
TLP822
Description
Manufacturer
Toshiba
Type
Transmissiver
Datasheet

Specifications of TLP822

Number Of Elements
1
Output Device
Phototransistor
Gap Width
5mm
Slit Width
0.5mm
Reverse Breakdown Voltage
5V
Collector-emitter Voltage
35V
Forward Current
50mA
Package Type
11-13B1
Collector Current (dc) (max)
50mA
Current Transfer Ratio
75%
Power Dissipation
75mW
Fall Time
50000ns
Rise Time
50000ns
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-10C to 75C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
0.3
0.1
0.5
20
30
10
10
60
50
80
40
0
3
1
3
5
0.8
5
1
1
0
0.9
Ta = 75 °C
20
Sample 2
Ambient temperature Ta (°C)
3
Forward current I F (mA)
Forward voltage V F (V)
Ta = 25 °C
V
V
CE
CE
1.0
5
50
= 2 V
= 0.4 V
40
25
I
I
F
IF – VF
C
1.1
0
– Ta
10
– I
F
Sample 1
60
-25
1.2
30
80
TLP827(F)
1.3
50
(typ.)
100
100
1.4
7
100
40
60
20
30
80
50
10
0
3
6
5
4
3
2
1
0
5
0
0
1
Ta = 25 °C
Collector-emitter voltage V CE (V)
2
20
Ambient temperature Ta (°C)
3
Forward current I F (mA)
Ta = 25 °C
V CE = 2 V
V CE = 0.4 V
4
5
40
I
TLP822(F),TLP827(F)
C
Sample 2
P
Sample 1
I
C
/ I
C
10
F
– Ta
6
– V
– I
60
CE
F
I F = 5mA
8
15
20
30
10
TLP827(F)
80
10
50
(typ.)
2004-02-12
100
100
12

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