CBTV4020EE NXP Semiconductors, CBTV4020EE Datasheet - Page 7

• Manufacturer Part Number: CBTV4020EE
• Manufacturer: NXP Semiconductors

Specifications of CBTV4020EE

• Operating Temperature (max): 85C
• Operating Temperature (min): 0C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

NXP Semiconductors
10. Static characteristics
Table 7.
T
[1]
[2]
[3]
[4]
[5]
11. Dynamic characteristics
Table 8.
V
[1]
[2]
CBTV4020_3
Product data sheet
Symbol
V
I
I
I
C
C
R
R
Symbol
t
t
t
t
t
LI
DD
OL
PD
en
dis
sk(o)
sk(edge)
amb
DD
IK
in
on
ON
pd
All typical values are at V
When SEL is HIGH, DBn must be open and DAn can be HIGH or LOW. When SEL is LOW, DAn must be open and DBn can be HIGH or
LOW.
SEL = GND for testing DAn, and SEL = V
Capacitance values are measured at 10 MHz and a bias voltage 3 V. Capacitance is not production tested.
Measured by the current between the host and the DIMM terminals at the indicated voltages on each side of the switch.
= 2.5 V
The propagation delay is based on the RC time constant of the typical ON-state resistance of the switch and a load capacitance, when
driven by an ideal voltage source (zero output impedance); 20
tested.
Skew is not production tested.
= 0 C to +85 C.
Parameter
input clamping current
input leakage current
supply current
LOW-level output current
control pin capacitance
switch on capacitance
ON resistance
pull-down resistance
Static characteristics
Dynamic characteristics
Parameter
propagation delay
enable time
disable time
output skew time
edge skew time
0.2 V.
DD
= 2.5 V, T
Conditions
from input DHn or DAn/DBn
to output DAn/DBn or DHn
from input SEL to output DAn/DBn or DHn
from input SEL to output DAn/DBn or DHn
any output to any output;
difference of rising edge propagation delay
and falling edge propagation delay;
Figure 8
amb
Conditions
V
V
SEL = GND or V
SEL = GND for I
V
on DBn or DAn; V
V
V
V
V
output; DAn (SEL = GND) or
DBn (SEL = V
DD
DD
DD
I
I
DD
DD
SEL
host port
DIMM port
DD
= 2.5 V or 0 V
= 1.5 V
= 25 C.
= 2.3 V; I
= 2.5 V; V
= 2.5 V; I
= 2.5 V; V
= 2.5 V; V
for testing DBn.
Rev. 03 — 4 April 2008
I
O
DD
I
A
A
= 18 mA
= V
= 0 mA; V
= 0.8 V; V
= 1.7 V; V
IL
DD
) = 0.5V
OL
(test)
DD
= 1 V
or GND;
Figure 7
DD
7 pF. Load capacitance = 7 pF. This parameter is not production
I
B
B
= V
= 1.0 V
= 1.5 V
DD
or GND
[1]
[2]
[2]
Min
-
1
1
-
-
[2]
[2]
[3]
[4]
[4]
[5]
[5]
[3]
20-bit DDR SDRAM 2 : 1 MUX
Min
-
-
-
-
-
-
-
-
16
16
-
Typ
140
-
-
25
25
CBTV4020
Typ
-
-
-
-
55
9.5
4
-
20
20
105
© NXP B.V. 2008. All rights reserved.
[1]
Max
-
2
3
50
50
Max
150
-
-
10
30
30
-
1.2
100
100
100
Unit
ps
ns
ns
ps
ps
7 of 16
Unit
V
mA
pF
pF
A
A
A
A