STB24NM60N STMicroelectronics, STB24NM60N Datasheet - Page 5

• Manufacturer Part Number: STB24NM60N
• Description: MOSFET N-CH 600V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB24NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11211-2

STB24NM60N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
t
RRM
RRM
I
Q
Q
t
r(v)
SD
t
t
f(i)
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Voltage rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 010008 Rev 1
V
R
(see Figure 14)
I
I
V
(see Figure 16)
I
V
(see Figure 16)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 17 A, V
= 17 A, di/dt = 100 A/µs
= 17 A, di/dt = 100 A/µs
= 300 V, I
= 60 V
= 60 V T
Test conditions
Test conditions
J
GS
GS
D
= 150 °C
= 8.5 A,
= 0
= 10 V
Electrical characteristics
Min.
Min. Typ. Max Unit
-
-
-
-
-
Typ.
11.5
16.5
73
37
340
404
4.6
5.7
27
28
Max Unit
1.6
17
68
-
µC
µC
ns
ns
ns
ns
ns
ns
5/15
A
A
V
A
A