STB24NM60N STMicroelectronics, STB24NM60N Datasheet - Page 6

• Manufacturer Part Number: STB24NM60N
• Description: MOSFET N-CH 600V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB24NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11211-2

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
0.1
(A)
10
I
D
1
V
40
(V)
0.1
(A)
30
20
10
12
10
I
GS
D
0
2
8
6
4
0
0
0
V
Electrical characteristics (curves)
DS
Safe operating area
Output characteristics
Gate charge vs gate-source voltage Figure 7.
5
10
1
Tc=25°C
Tc=25°C
Tj=150°C
Tj=150°C
Sinlge
Sinlge
pulse
pulse
20
10
V
V
DD
I
GS
D
10
=480V
= 17A
= 10 V
15
30
20
40
100
V
V
V
GS
GS
GS
25
50
= 6 V
= 7 V
= 5 V
V
V
DS
V
GS
Q
(V)
DS
Doc ID 010008 Rev 1
g
100µs
AM07976v1
10µs
1ms
10ms
(nC)
(V)
AM07977v1
AM07979v1
400
500
100
0
300
200
Figure 3.
Figure 5.
R
I
0.168
0.158
0.176
0.174
0.172
0.170
0.166
0.162
0.160
0.164
DS(on)
D
(A)
(Ω)
15
30
25
20
10
40
35
5
0
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
V
DS
2
V
= 20 V
GS
=10V
5
4
10
6
8
15
STB24NM60N
10
V
I
GS
D
(A)
AM07978v2
(V)
AM08534v1