STB24NM60N STMicroelectronics, STB24NM60N Datasheet - Page 7

• Manufacturer Part Number: STB24NM60N
• Description: MOSFET N-CH 600V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB24NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11211-2

STB24NM60N
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Normalized B
(norm)
V
(norm)
BV
6100
2100
5100
4100
3100
1100
GS(th)
1.00
0.80
1.10
0.70
0.90
1.00
0.98
1.03
0.95
0.92
1.06
(pF)
100
DSS
C
-50
-50
0
Capacitance variations
vs temperature
-25
-25
I
D
0
= 1 mA
20
0
25
25
50
40
VDSS
50
75
75
vs temperature
Crss
I
D =
100
60
100
250 µA
Coss
Ciss
T
T
V
J
(°C)
J
Doc ID 010008 Rev 1
DS
(°C)
AM08539v1
AM08535v1
AM08537v1
(V)
Figure 9.
Figure 11. Normalized on resistance vs
Figure 13. Source-drain diode forward
(norm)
R
DS(on)
E
(µJ)
(V)
V
1.0
0.5
1.5
oss
0.6
0.2
2.0
1.0
1.4
1.2
0.8
0.4
4.0
8.0
6.0
5.0
3.0
1.0
7.0
2.0
SD
9.0
0
0
-50
0
0
Output capacitance stored energy
temperature
characteristics
-25
100
T
2
J
=150°C
0
200
4
25
T
I
Electrical characteristics
300 400
D
J
6
=-50°C
= 8 A
50
8
75
500
10
100
500
12
T
J
T
(°C)
J
AM08538v1
AM09005v1
AM08536v1
=25°C
I
SD
V
DS
(A)
7/15
(V)