IXFX78N50P3 IXYS, IXFX78N50P3 Datasheet - Page 2

• Manufacturer Part Number: IXFX78N50P3
• Description: MOSFET N-CH 500V 78A PLUS247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFX78N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 68 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 78A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 147nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 1130W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 78
• Rds(on), Max, Tj=25°c, (?): 0.068
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 147
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1130
• Rthjc, Max, (ºc/w): 0.11
• Package Style: PLUS247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
Gate Input Resistance
F
F
DS
GS
GS
GS
GS
R
G
= I
= 39A, -di/dt = 100A/μs
= 100V, V
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
S
ADVANCE TECHNICAL INFORMATION
, V
GS
= 0V, Note 1
D
DS
DS
DS
= 0.5 • I
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
40
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
13.0
0.15
Typ.
Typ.
970
147
1.2
1.1
9.9
5.0
30
10
60
50
38
75
7
0.11 °C/W
Max.
250
310
1.5
Max.
6,404,065 B1
6,534,343
6,583,505
78
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS 247
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
Terminals: 1 - Gate
25.91
19.81
20.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
20.80
15.75
19.81
TM
Millimeter
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
5.46 BSC
Min.
Millimeter
5.45 BSC
Outline
IXFK78N50P3
26.16
19.96
20.83
7,005,734 B2
7,063,975 B2
IXFX78N50P3
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
2 - Drain
3 - Source
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
1.020
Min.
Terminals: 1 - Gate
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.215 BSC
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
Inches
.215 BSC
Inches
7,157,338B2
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
2 - Drain
3 - Source
4 - Drain