IXFX78N50P3 IXYS, IXFX78N50P3 Datasheet - Page 4

• Manufacturer Part Number: IXFX78N50P3
• Description: MOSFET N-CH 500V 78A PLUS247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFX78N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 68 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 78A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 147nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 1130W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 78
• Rds(on), Max, Tj=25°c, (?): 0.068
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 147
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1130
• Rthjc, Max, (ºc/w): 0.11
• Package Style: PLUS247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
240
200
160
120
100
90
80
70
60
50
40
30
20
10
80
40
10
0
0
1
3.0
0.3
0
f
0.4
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.5
4.0
10
0.6
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
J
4.5
= 125ºC
15
0.7
V
V
V
SD
DS
GS
5.0
0.8
- Volts
20
- Volts
- Volts
T
J
= 125ºC
- 40ºC
0.9
25ºC
T
5.5
25
J
= 25ºC
C oss
C rss
1.0
C iss
6.0
30
1.1
6.5
35
1.2
7.0
1.3
40
1000
140
120
100
100
80
60
40
20
10
10
9
8
7
6
5
4
3
2
1
0
1
0
10
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
10
= 25ºC
= 39A
= 10mA
20
= 250V
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
20
40
Limit
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
60
Q
G
- NanoCoulombs
I
D
V
40
DS
- Amperes
100
80
- Volts
50
100
IXFK78N50P3
IXFX78N50P3
60
120
T
J
70
= - 40ºC
125ºC
25ºC
140
100µs
1ms
80
1,000
160
90