IXFX78N50P3 IXYS, IXFX78N50P3 Datasheet - Page 3

• Manufacturer Part Number: IXFX78N50P3
• Description: MOSFET N-CH 500V 78A PLUS247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFX78N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 68 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 78A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 147nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 1130W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 78
• Rds(on), Max, Tj=25°c, (?): 0.068
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 147
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1130
• Rthjc, Max, (ºc/w): 0.11
• Package Style: PLUS247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2011 IXYS CORPORATION, All Rights Reserved
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0
0
0
V
GS
Fig. 5. R
= 10V
20
Fig. 1. Output Characteristics @ T
Fig. 3. Output Characteristics @ T
2
1
40
DS(on)
4
2
Normalized to I
60
Drain Current
I
6
D
V
V
DS
- Amperes
DS
- Volts
80
- Volts
3
8
T
J
V
100
V
D
= 125ºC
GS
GS
= 39A Value vs.
= 10V
= 10V
4
7V
7V
T
10
J
J
= 25ºC
J
120
6V
5V
= 25ºC
= 125ºC
6V
4V
5V
5
12
140
160
14
6
160
140
120
100
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
Fig. 4. R
= 10V
-25
-25
5
Fig. 6. Maximum Drain Current vs.
0
DS(on)
0
Junction Temperature
T
T
Case Temperature
Normalized to I
C
25
J
25
- Degrees Centigrade
- Degrees Centigrade
V
10
GS
V
= 10V
DS
8V
7V
6V
5V
50
50
- Volts
15
75
D
IXFK78N50P3
75
IXFX78N50P3
= 39A Value vs.
I
D
= 78A
100
100
20
J
= 25ºC
I
125
D
125
= 39A
150
150
25