ML610Q408-NNNTBZ03A7 Rohm Semiconductor, ML610Q408-NNNTBZ03A7 Datasheet - Page 20

• Manufacturer Part Number: ML610Q408-NNNTBZ03A7
• Description: MCU 8BIT 16K FLASH 8CH 100-TQFP
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of ML610Q408-NNNTBZ03A7

• Core Processor: nX-U8/100
• Core Size: 8-Bit
• Speed: 2MHz
• Connectivity: SSP, UART/USART
• Peripherals: LCD, Melody Driver, POR, PWM, WDT
• Number Of I /o: 22
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.25 V ~ 3.6 V
• Data Converters: A/D 2x16b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 70°C
• Package / Case: 100-TFQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

OPERATING CONDITIONS OF FLASH ROM
DC CHARACTERISTICS (1/5)
*1
RESET
OKI SEMICONDUCTOR
Operating temperature
Operating voltage
erase/program cycles
Data retention
500kHz/2MHz RC oscillation
frequency
Low-speed crystal oscillation
start time*
500kHz/2MHz RC oscillation
start time
Low-speed oscillation stop
detect time
Reset pulse width
Reset noise elimination
pulse width
Power-on reset activation
power rise time
*
*
*
: Those voltages must be supplied to V
1
2
3
V
: When low-speed crystal oscillation stops for a duration more than the low-speed oscillation stop detect time, the system is
: Use 32.768KHz Crystal resonator DT-26 (Load capacitance 6pF) (made by KDS:DAISHINKU CORP.) is used
: Recommended operating temperature (Ta = −20 to +70°C, Ta = −40 to +85°C for P version)
PP
reset to shift to system reset mode.
(C
GL
pin has an internal pulldown resister.
=C
2
Parameter
DL
RESET_N
*1
VDD
=12pF).
Parameter
(V
DD
= 1.25 to 3.6V, V
0.1xV
DD
Symbol
P
T
T
P
T
T
f
STOP
NRST
POR
RC
RST
XTL
0.9xV
RC
T
SS
POR
= 0V, Ta = −20 to +70°C, Ta = −40 to +85°C for P version, unless otherwise specified)
Symbol
DD
V
DDL
V
C
Y
T
V
V
V
DDL
OP
DD
PP
DR
EP
DD
DD
to 3.6V
to 3.6V
pin and V
VIL1
= 1.25
= 1.80
Condition
RESET_N pin reset
Power on reset
⎯
⎯
⎯
⎯
⎯
⎯
PP
Ta = 25°C
Ta = 25°C
pin when programming and eraseing Flash ROM.
P
VIL1
RST
At write/erase
At write/erase
At write/erase
At write/erase
*
*
3
3
Condition
⎯
⎯
−10%
−25%
−10%
−25%
*1
*1
*1
Min.
Typ.
Typ.
Typ.
Typ.
200
⎯
⎯
12
⎯
⎯
ML610Q407/ML610Q408/ML610Q409
Rating
Typ.
16.4
500
500
2.0
2.0
0.6
⎯
⎯
⎯
⎯
+10%
+25%
+10%
+25%
Max.
2.75 to 3.6
2.5 to 2.75
Typ.
Typ.
Typ.
Typ.
7.7 to 8.3
0.3
0.3
41
10
⎯
0 to +40
2
Range
80
10
MHz
Unit
kHz
ms
ms
μs
μs
s
FEDL610Q409-01
Measuring
(V
circuit
SS
cycles
years
Unit
1
°C
V
= 0V)
20/33