LMX2332USLBX National Semiconductor, LMX2332USLBX Datasheet - Page 7

• Manufacturer Part Number: LMX2332USLBX
• Description: IC FREQ SYNTH DUAL 24LAMINATECSP
• Manufacturer: National Semiconductor
• Series: PLLatinum™r
• Type: PLL Frequency Synthesizerr

Specifications of LMX2332USLBX

• Pll: Yes with Bypass
• Input: CMOS, TTL
• Output: CMOS
• Number Of Circuits: 1
• Ratio - Input:output: 3:1
• Differential - Input:output: Yes/No
• Frequency - Max: 1.2GHz, 600MHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-Laminate CSP
• Frequency-max: 1.2GHz
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: LMX2332USLBXTR

I
I
I
I
I
RF SYNTHESIZER PARAMETERS
f
N
R
F
CC
CC RF + IF
CC RF
CC IF
CC-PWDN
IN
φRF
RF
RF
Absolute Maximum Ratings
2, 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
V
Symbol
Power Supply Voltage
Voltage on any pin to GND (V
Storage Temperature Range (T
Lead Temperature (solder 4 s) (T
TSSOP θ
CSP θ
RF
CC
PARAMETERS
V
V
V
V
CC
P
P
I
= V
must be
RF to GND
IF to GND
JA
to GND
P
Thermal Impedance
JA
RF = V
Power Supply
Current, RF + IF
Synthesizers
Power Supply
Current, RF
Synthesizer Only
Power Supply
Current, IF
Synthesizer Only
Powerdown Current
RF Operating
Frequency
RF N Divider Range
RF R Divider Range
RF Phase Detector Frequency
Thermal Impedance
<
+6.5V
P
IF = 3.0V, −40˚C ≤ T
Parameter
I
)
S
)
L
)
LMX2330U
LMX2331U
LMX2332U
LMX2330U
LMX2331U
LMX2332U
LMX233xU
LMX233xU
LMX2330U
LMX2331U
LMX2332U
−0.3V to V
A
−65˚C to +150˚C
≤ +85˚C, unless otherwise specified
−0.3V to +6.5V
−0.3V to +6.5V
−0.3V to +6.5V
(Notes 1,
114.5˚C/W
112˚C/W
CC
+260˚C
Clock, Data and LE = GND
OSC
PWDN RF Bit = 0
PWDN IF Bit = 0
Clock, Data and LE = GND
OSC
PWDN RF Bit = 0
PWDN IF Bit = 1
Clock, Data and LE = GND
OSC
PWDN RF Bit = 1
PWDN IF Bit = 0
Clock, Data and LE = GND
OSC
PWDN RF Bit = 1
PWDN IF Bit = 1
Prescaler = 32/33
(Note 4)
Prescaler = 64/65
(Note 4)
Prescaler = 128/129
(Note 4)
+0.3V
in
in
in
in
= GND
= GND
= GND
= GND
7
Conditions
Recommended Operating
Conditions
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, refer to the Electrical Characteristics section. The guaranteed specifi-
cations apply only for the conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD
rating
should only be done at ESD protected work stations.
Note 3: GND = 0V
Power Supply Voltage
Operating Temperature (T
V
V
V
CC
P
P
<
RF to GND
IF to GND
2 kV and is ESD sensitive. Handling and assembly of this device
to GND
(Note 1)
Min
500
200
100
192
384
96
3
A
)
Value
Typ
3.3
2.9
2.5
2.3
1.9
1.5
1.0
1.0
−40˚C to +85˚C
+2.7V to +5.5V
V
V
131135
262143
65631
32767
CC
CC
2500
2000
1200
Max
10.0
www.national.com
4.3
3.8
3.3
3.0
2.5
2.0
1.3
10
to +5.5V
to +5.5V
Units
MHz
MHz
MHz
MHz
mA
mA
mA
mA
mA
mA
mA
µA