CY62128EV30LL-55SXET Cypress Semiconductor Corp, CY62128EV30LL-55SXET Datasheet - Page 4

• Manufacturer Part Number: CY62128EV30LL-55SXET
• Description: CY62128EV30LL-55SXET
• Manufacturer: Cypress Semiconductor Corp
• Series: -r

Specifications of CY62128EV30LL-55SXET

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 1M (128K x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 32-SOIC (0.445", 11.30mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature................................. –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground
potential ........................................–0.3 V to V
DC voltage applied to outputs
in High-Z state
DC input voltage
Electrical Characteristics
(Over the Operating Range)
Document #: 001-65528 Rev. **
V
V
V
V
I
I
I
I
I
Notes
Parameter
IX
OZ
CC
SB1
SB2
4. V
5. V
6. Full device AC operation assumes a 100 s ramp time from 0 to V
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
8. Chip enables (CE
OH
OL
IH
IL
[8]
IL(min)
IH(max)
= –2.0 V for pulse durations less than 20 ns.
= V
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
current
Automatic CE
power-down
current — CMOS inputs
Automatic CE
power-down
current — CMOS inputs
CC
[4, 5]
CC
+0.75 V for pulse durations less than 20 ns.
[4,5]
operating supply
1
.........................–0.3 V to V
and CE
.......................–0.3 V to V
Description
2
) must be at CMOS level to meet the I
I
I
V
V
V
V
GND < V
GND < V
f = f
f = 1 MHz
CE
V
f = f
f = 0 (OE and WE), V
CE
V
f = 0, V
I
I
OH
OH
OL
OL
CC
CC
CC
CC
IN
IN
1
1
= 0.1 mA
= 2.1 mA, V
max
> V
max
= –0.1 mA, V
= –1.0 mA, V
> V
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
= 2.2 V to 2. V
= 2.2 V to 2.7 V
> V
> V
CC(max)
CC(max)
CC(max)
CC
CC
CC
(address and data only),
= 1/t
CC
CC
Test Conditions
I
O
< V
–0.2 V, V
= 3.60 V
< V
– 0.2 V or V
0.2 V, CE
– 0.2 V, CE
RC
CC
+ 0.3 V
+ 0.3 V
+ 0.3 V
CC
CC
SB2
CC
, output disabled
V
I
CMOS levels
CC
CC
OUT
(min) and 200 s wait time after V
CC
> 2.70 V
/ I
IN
< 2.70 V
> 2.70 V
CCDR
< 0.2 V)
CC
2
= V
= 0 mA
IN
2
< 0.2 V
= 3.60 V
< 0.2 V
spec. Other inputs can be left floating.
< 0.2 V,
CCmax
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up current...................................................... > 200 mA
Operating Range
CY62128EV30LL
Device
CY62128EV30 MoBL
–0.3
–0.3
Min
2.0
2.4
1.8
2.2
–1
–1
–
–
–
–
–
–
45 ns (Auto-A)
CC
Typ
1.3
11
stabilization.
–
–
–
–
–
–
–
–
–
–
1
1
[7]
Range
Auto-A
Auto-E
CC
V
V
Max
0.3V
0.3V
0.4
0.4
0.6
0.8
2.0
CC
CC
+1
+1
16
= V
–
–
4
4
+
+
CC(typ)
, T
–40 °C to +125 °C
–0.3
–0.3
Min
–40 °C to +85 °C 2.2 V to
2.0
2.4
1.8
2.2
–4
–4
–
–
–
–
–
–
A
Temperature
55 ns (Auto-E)
= 25 °C
Ambient
®
Typ
Automotive
1.3
11
–
–
–
–
–
–
–
–
–
–
1
1
[7]
Page 4 of 14
V
V
Max
0.3V
0.3V
0.4
0.4
0.6
0.8
4.0
CC
CC
+4
+4
35
35
30
–
–
+
+
V
3.6 V
CC
Unit
mA
mA
A
A
A
A
[6]
V
V
V
V
V
V
V
V
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