BAP64-06W NXP Semiconductors, BAP64-06W Datasheet - Page 3

Two planar PIN diodes in common anode configuration in a SOT323 small SMD plastic package

BAP64-06W

Manufacturer Part Number
BAP64-06W
Description
Two planar PIN diodes in common anode configuration in a SOT323 small SMD plastic package
Manufacturer
NXP Semiconductors
Type
Attenuator/Switchr
Datasheet

Specifications of BAP64-06W

Configuration
Dual Common Anode
Forward Current
100mA
Forward Voltage
1.1V
Power Dissipation
240mW
Operating Temperature Classification
Military
Reverse Voltage
100V
Package Type
SC-70
Mounting
Surface Mount
Maximum Series Resistance @ Minimum If
40@0.5mAOhm
Maximum Series Resistance @ Maximum If
1.35@100mAOhm
Typical Carrier Life Time
1.55us
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
3
Applications Frequency Range
SHF
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAP64-06W
Manufacturer:
NXP
Quantity:
72 000
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 Apr 17
Per diode
V
I
C
r
s
s
s
s
s
L
R
j
SYMBOL
R
SYMBOL
D
L
S
= 25 C unless otherwise specified.
F
21
21
21
21
21
Silicon PIN diode
d
th j-s
2
2
2
2
2
forward voltage
reverse current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
V
V
V
V
V
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
when switched from I
I
measured at I
I
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
R
F
R
R
R
R
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 100 mA; f = 100 MHz; note 1
= 0.5 mA; f = 900 MHz
= 0.5 mA; f = 1800 MHz
= 0.5 mA; f = 2450 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 900 MHz
= 100 mA; f = 1800 MHz
= 100 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
= 6 mA; R
= 100 V
= 20 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
3
CONDITIONS
L
R
= 100 ;
= 3 mA
F
= 10 mA to
0.95
0.52
0.37
0.23
20
10
2
0.7
18.5
13.5
10.9
1.86
2.06
2.23
1.01
1.06
1.10
0.19
0.21
0.27
0.08
0.10
0.16
1.55
1.6
TYP.
VALUE
BAP64-06W
250
Product specification
1.1
10
1
0.35
40
20
3.8
1.35
MAX.
UNIT
K/W
V
A
A
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
nH
UNIT

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