BAP64-06W NXP Semiconductors, BAP64-06W Datasheet - Page 4

• Manufacturer Part Number: BAP64-06W
• Description: Two planar PIN diodes in common anode configuration in a SOT323 small SMD plastic package
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP64-06W

• Configuration: Dual Common Anode
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Power Dissipation: 240mW
• Operating Temperature Classification: Military
• Reverse Voltage: 100V
• Package Type: SC-70
• Mounting: Surface Mount
• Maximum Series Resistance @ Minimum If: 40@0.5mAOhm
• Maximum Series Resistance @ Maximum If: 1.35@100mAOhm
• Typical Carrier Life Time: 1.55us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Applications Frequency Range: SHF
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
GRAPHICAL DATA
2001 Apr 17
handbook, halfpage
handbook, halfpage
Silicon PIN diode
f = 100 MHz; T
Fig.2
(1) I
(2) I
Diode inserted in series with a 50  stripline circuit
and biased via the analyzer Tee network; T
Fig.4
s 21
(dB)
10
(Ω)
r D
10
10
−1
−2
−3
−4
−5
F
F
10
2
−1
10
0
1
= 100 mA.
= 10 mA.
3
2
0.5
−1
Forward resistance as a function of forward
current; typical values.
Insertion loss (s
function of frequency; typical values.
j
= 25 C.
1
(1)
1
(3) I
(4) I
1.5
(2)
(3)
(4)
21
F
F
= 1 mA.
= 0.5 mA.

2
) of the diode as a
2
10
amb
= 25 C.
I F (mA)
2.5
f (GHz)
MLD596
MLD598
10
3
2
4
handbook, halfpage
handbook, halfpage
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
s 21
amb
(dB)
(fF)
600
400
200
C d
−10
−15
−20
−25
−5
= 25 C.
2
0
0
0.5
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (s
of frequency; typical values.
j
= 25 C.
4
1
21
1.5
8

2
) of the diode as a function
12
2
BAP64-06W
Product specification
2.5
16
V R (V)
f (GHz)
MLD597
MLD599
20
3