MT41J256M8DA-125:H Micron Technology Inc, MT41J256M8DA-125:H Datasheet - Page 29

• Manufacturer Part Number: MT41J256M8DA-125:H
• Manufacturer: Micron Technology Inc

Specifications of MT41J256M8DA-125:H

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Electrical Specifications
Absolute Ratings
Table 6: Absolute Maximum Ratings
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
V
Symbol
IN
V
T
V
, V
DDQ
T
STG
DD
C
OUT
V
V
Voltage on any pin relative to V
DD
DD
Operating case temperature
supply voltage relative to V
supply voltage relative to V
Notes:
Storage temperature
Parameter
Stresses greater than those listed in Table 6 may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation of the device at these or any
other conditions outside those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
1. V
2. MAX operating case temperature. T
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
greater than 0.6 × V
ing operation.
DD
and V
DDQ
SSQ
must be within 300mV of each other at all times, and V
SS
SS
DDQ
. When V
29
Min
–0.4
–0.4
–0.4
–55
0
DD
and V
C
Micron Technology, Inc. reserves the right to change products or specifications without notice.
is measured in the center of the package.
DDQ
1.975
1.975
1.975
Max
2Gb: x4, x8, x16 DDR3 SDRAM
150
95
are less than 500mV, V
Electrical Specifications
Units
© 2006 Micron Technology, Inc. All rights reserved.
°C
°C
V
V
V
REF
REF
may be ≤300mV.
must not be
Notes
2, 3
1
C
dur-