USB2005-MV-01 Standard Microsystems (SMSC), USB2005-MV-01 Datasheet - Page 17

• Manufacturer Part Number: USB2005-MV-01
• Manufacturer: Standard Microsystems (SMSC)

Specifications of USB2005-MV-01

• Operating Temperature (min): 0C
• Operating Temperature Classification: Commercial
• Operating Temperature (max): 70C
• Rad Hardened: No
• Lead Free Status / Rohs Status: Compliant

USB 2.0 ATA/ATAPI Controller with PD-DRM
Datasheet
Chapter 8 DC Parameters
SMSC USB2005
8.1
8.2
I Type Input Buffer
Low Input Level
High Input Level
ICLK Input Buffer
Low Input Level
High Input Level
Input Leakage
(All I and IS buffers)
Low Input Leakage
High Input Leakage
Maximum Guaranteed Ratings
DC Electrical Characteristics
*Stresses above the specified parameters could cause permanent damage to the device. This is a
Operating Temperature Range ............................................................................................0
Storage Temperature Range............................................................................................. -55
Lead Temperature Range (soldering, 10 seconds) ...................................................................... +325
Positive Voltage on any pin, with respect to Ground ........................................................................ 5.5V
Negative Voltage on any pin, with respect to Ground ..................................................................... -0.3V
Maximum V
Maximum V
stress rating only and functional operation of the device at any other condition above those indicated
in the operation sections of this specification is not implied.
Note: When powering this device from laboratory or system power supplies, it is important that the
(T
PARAMETER
A
= 0°C - 70°C, V
Absolute Maximum Ratings not be exceeded or device failure can result. Some power supplies
exhibit voltage spikes on their outputs when the AC power is switched on or off. In addition,
voltage transients on the AC power line may appear on the DC output. When this possibility
exists, it is suggested that a clamp circuit be used.
DDA,
DD,
V
V
DDP
DDIO
DDIO,
........................................................................................................................ +3.0V
..................................................................................................................... +4.0V
V
DDA
SYMBOL
= +3.3 V ± 10%, V
V
V
V
V
IHCK
ILCK
I
DATASHEET
I
IH
IHI
IL
ILI
17
MIN
2.0
2.2
-10
-10
DD,
TYP
V
DDP
= +2.5 V ± 10%,)
MAX
+10
+10
0.8
0.4
UNITS
µA
µA
V
V
V
V
Revision 0.2 (01-16-07)
TTL Levels
V
V
IN
IN
COMMENTS
= 0
= V
o
DDIO
o
C to +70
to +150
o
o
o
C
C
C